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脑电传感器

技术参数

温度:-10℃ - 40℃

大气压力: 86kpa – 106kpa

交流阻抗:≤3KΩ(10HZ)

内部噪音:≤150UV(峰一峰)

模拟除颤后交流阻抗:≤3KΩ

偏置电流耐受度:≤100MV

颤后恢复性能:放点后第5”电极对电压值≤100MV, 此后30”平均变化率≤±1MV/S

产品特点:无创测量灵敏,粘贴强,体积小。